Invention Grant
- Patent Title: Method for fabricating light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US13594859Application Date: 2012-08-26
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Publication No.: US08535958B2Publication Date: 2013-09-17
- Inventor: Tzu-Chien Hung , Chia-Hui Shen , Chih-Pang Ma , Chih-Peng Hsu , Shih-Hsiung Chan
- Applicant: Tzu-Chien Hung , Chia-Hui Shen , Chih-Pang Ma , Chih-Peng Hsu , Shih-Hsiung Chan
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: TW97127080A 20080717
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.
Public/Granted literature
- US20120322183A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE Public/Granted day:2012-12-20
Information query
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