发明授权
US08536046B2 Partitioned through-layer via and associated systems and methods 有权
分层通过层和通过相关的系统和方法

  • 专利标题: Partitioned through-layer via and associated systems and methods
  • 专利标题(中): 分层通过层和通过相关的系统和方法
  • 申请号: US13757295
    申请日: 2013-02-01
  • 公开(公告)号: US08536046B2
    公开(公告)日: 2013-09-17
  • 发明人: Teck Kheng Lee
  • 申请人: Micron Technology, Inc.
  • 申请人地址: US ID Boise
  • 专利权人: Micron Technology
  • 当前专利权人: Micron Technology
  • 当前专利权人地址: US ID Boise
  • 代理机构: Perkins Coie LLP
  • 优先权: SG200706414-0 20070831
  • 主分类号: H01L21/44
  • IPC分类号: H01L21/44
Partitioned through-layer via and associated systems and methods
摘要:
Partitioned vias, interconnects, and substrates that include such vias and interconnects are disclosed herein. In one embodiment, a substrate has a non-conductive layer and a partitioned via formed in a portion of the non-conductive layer. The non-conductive layer includes a top side, a bottom side, and a via hole extending between the top and bottom sides and including a sidewall having a first section a second section. The partitioned via includes a first metal interconnect within the via on the first section of the sidewall and a second metal interconnect within the via hole on the second section of the sidewall and electrically isolated from the first metal interconnect. In another embodiment, the first metal interconnect is separated from the second metal interconnect by a gap within the via hole.
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