发明授权
US08536570B2 Composition for oxide thin film, preparation method of the composition, methods for forming the oxide thin film using the composition, and electronic device using the composition
有权
氧化物薄膜的组成，组合物的制备方法，使用该组合物形成氧化物薄膜的方法，以及使用该组合物的电子器件
- 专利标题： Composition for oxide thin film, preparation method of the composition, methods for forming the oxide thin film using the composition, and electronic device using the composition
- 专利标题（中）： 氧化物薄膜的组成，组合物的制备方法，使用该组合物形成氧化物薄膜的方法，以及使用该组合物的电子器件
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申请号： US13341060申请日： 2011-12-30
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公开(公告)号： US08536570B2公开(公告)日： 2013-09-17
- 发明人: Hyun Jae Kim , Woong Hee Jeong , Jung Hyeon Bae , Kyung Min Kim
- 申请人： Hyun Jae Kim , Woong Hee Jeong , Jung Hyeon Bae , Kyung Min Kim
- 申请人地址： KR Seoul
- 专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人地址： KR Seoul
- 代理机构： Carter, DeLuca, Farrell & Schmidt, LLP
- 优先权： KR10-2010-0139870 20101231
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01B1/02
摘要：
Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound.
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