发明授权
- 专利标题: Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
- 专利标题(中): 光电半导体芯片及其制造方法
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申请号: US13123779申请日: 2009-10-12
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公开(公告)号: US08536603B2公开(公告)日: 2013-09-17
- 发明人: Stefan Illek , Uwe Strauss
- 申请人: Stefan Illek , Uwe Strauss
- 申请人地址: DE
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE
- 代理机构: DLA Piper LLP (US)
- 优先权: DE102008054217 20081031
- 国际申请: PCT/DE2009/001416 WO 20091012
- 国际公布: WO2010/048918 WO 20100506
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.
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