Invention Grant
US08536613B2 Heterostructure containing IC and LED and method for fabricating the same
有权
含有IC和LED的异质结构及其制造方法
- Patent Title: Heterostructure containing IC and LED and method for fabricating the same
- Patent Title (中): 含有IC和LED的异质结构及其制造方法
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Application No.: US13224607Application Date: 2011-09-02
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Publication No.: US08536613B2Publication Date: 2013-09-17
- Inventor: Kuan-Neng Chen , Cheng-Ta Ko , Wei-Chung Lo
- Applicant: Kuan-Neng Chen , Cheng-Ta Ko , Wei-Chung Lo
- Applicant Address: TW Hsnichu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsnichu
- Agency: Rosenberg, Klein & Lee
- Priority: TW100119755A 20110607
- Main IPC: H01L33/62
- IPC: H01L33/62

Abstract:
A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.
Public/Granted literature
- US20120313133A1 HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-12-13
Information query
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