Invention Grant
- Patent Title: Strained MOS device and methods for forming the same
- Patent Title (中): 应变MOS器件及其形成方法
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Application No.: US11702390Application Date: 2007-02-05
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Publication No.: US08536619B2Publication Date: 2013-09-17
- Inventor: Ta-Ming Kuan , Chih-Hsin Ko , Wen-Chin Lee
- Applicant: Ta-Ming Kuan , Chih-Hsin Ko , Wen-Chin Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the semiconductor substrate.
Public/Granted literature
- US20080185617A1 Strained MOS device and methods for forming the same Public/Granted day:2008-08-07
Information query
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