- 专利标题： Deuterated film encapsulation of nonvolatile charge trap memory device
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申请号： US11904474申请日： 2007-09-26
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公开(公告)号： US08536640B2公开(公告)日： 2013-09-17
- 发明人: Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
- 申请人： Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.
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