Invention Grant
- Patent Title: Deuterated film encapsulation of nonvolatile charge trap memory device
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Application No.: US11904474Application Date: 2007-09-26
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Publication No.: US08536640B2Publication Date: 2013-09-17
- Inventor: Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
- Applicant: Krishnaswamy Ramkumar , Fredrick B. Jenne , William W. Koutny
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.
Public/Granted literature
- US20090020831A1 Deuterated film encapsulation of nonvolatile charge trap memory device Public/Granted day:2009-01-22
Information query
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