Invention Grant
- Patent Title: Silicon microphone with integrated back side cavity
- Patent Title (中): 硅麦克风集成后侧腔
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Application No.: US13670134Application Date: 2012-11-06
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Publication No.: US08536666B2Publication Date: 2013-09-17
- Inventor: Wei-Yan Shih
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
An integrated circuit containing a capacitive microphone with a back side cavity located within the substrate of the integrated circuit. Access holes may be formed through a dielectric support layer at the surface of the substrate to provide access for etchants to the substrate to form the back side cavity. The back side cavity may be etched after a fixed plate and permeable membrane of the capacitive microphone are formed by providing etchants through the permeable membrane and through the access holes to the substrate.
Public/Granted literature
- US20130064400A1 SILICON MICROPHONE WITH INTEGRATED BACK SIDE CAVITY Public/Granted day:2013-03-14
Information query
IPC分类: