发明授权
- 专利标题： Magnetic element with storage layer materials
- 专利标题（中）： 磁性元件与存储层材料
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申请号： US12352648申请日： 2009-01-13
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公开(公告)号： US08536669B2公开(公告)日： 2013-09-17
- 发明人: Xiaochun Zhu , Xia Li , Seung H. Kang
- 申请人： Xiaochun Zhu , Xia Li , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Michelle S. Gallardo
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11B5/33 ; G11C11/02
摘要：
According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.
公开/授权文献
- US20100176471A1 Magnetic Element With Storage Layer Materials 公开/授权日：2010-07-15
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