Invention Grant
- Patent Title: Semiconductor structure comprising moisture barrier and conductive redistribution layer
- Patent Title (中): 包括防潮层和导电再分布层的半导体结构
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Application No.: US13306708Application Date: 2011-11-29
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Publication No.: US08536707B2Publication Date: 2013-09-17
- Inventor: James Wholey , Ray Myron Parkhurst , Marshall Maple
- Applicant: James Wholey , Ray Myron Parkhurst , Marshall Maple
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.
Public/Granted literature
- US20130134560A1 SEMICONDUCTOR STRUCTURE COMPRISING MOISTURE BARRIER AND CONDUCTIVE REDISTRIBUTION LAYER Public/Granted day:2013-05-30
Information query
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