发明授权
- 专利标题： Read sensing circuit and method with equalization timing
- 专利标题（中）： 读取具有均衡定时的感测电路和方法
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申请号： US13033109申请日： 2011-02-23
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公开(公告)号： US08537606B2公开(公告)日： 2013-09-17
- 发明人: Jung Pill Kim , Tae Hyun Kim
- 申请人： Jung Pill Kim , Tae Hyun Kim
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C7/00
摘要：
A Magnetic Random Access Memory (MRAM) includes read sensing circuitry having an equalizer device configured between a bit cell output node and a reference node of the bit cell. The equalizer is turned on to couple the output node to the reference node during an initial portion of a read operation and to decouple the output node from the reference node after an equalization delay period. A sense amplifier is enabled to provide a data output from the bit cell only after the delay period and decoupling of the output node from the reference node to provide balanced sensing speed of data represented by parallel and antiparallel state magnetic tunnel junctions (MTJs).
公开/授权文献
- US20120188817A1 Read Sensing Circuit and Method with Equalization Timing 公开/授权日：2012-07-26
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