Invention Grant
US08541098B2 Purification of metal nanostructures for improved haze in transparent conductors made from the same
有权
净化金属纳米结构，以改善由其制成的透明导体中的雾度
- Patent Title: Purification of metal nanostructures for improved haze in transparent conductors made from the same
- Patent Title (中): 净化金属纳米结构，以改善由其制成的透明导体中的雾度
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Application No.: US12862664Application Date: 2010-08-24
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Publication No.: US08541098B2Publication Date: 2013-09-24
- Inventor: Pierre-Marc Allemand
- Applicant: Pierre-Marc Allemand
- Applicant Address: US CA Sunnyvale
- Assignee: Cambrios Technology Corporation
- Current Assignee: Cambrios Technology Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Seed IP Law Group PLLC
- Main IPC: B32B5/16
- IPC: B32B5/16 ; D04H1/00
Abstract:
Provided are a method of isolating and purifying metal nanowires from a crude and complex reaction mixture that includes relatively high aspect ratio nanostructures as well as nanostructures of low aspect ratio shapes, and conductive films made of the purified nanostructures.
Public/Granted literature
- US20110045272A1 PURIFICATION OF METAL NANOSTRUCTURES FOR IMPROVED HAZE IN TRANSPARENT CONDUCTORS MADE FROM THE SAME Public/Granted day:2011-02-24
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