发明授权
US08541253B2 III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device
失效
III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
- 专利标题: III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device
- 专利标题(中): III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
-
申请号: US13416844申请日: 2012-03-09
-
公开(公告)号: US08541253B2公开(公告)日: 2013-09-24
- 发明人: Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Takamichi Sumitomo , Masaki Ueno , Takatoshi Ikegami , Koji Katayama , Takao Nakamura
- 申请人: Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Takamichi Sumitomo , Masaki Ueno , Takatoshi Ikegami , Koji Katayama , Takao Nakamura
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Venable LLP
- 代理商 Michael A. Sartori; Tamatane J. Aga
- 优先权: JP2009-228747 20090930
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.