Invention Grant
US08541775B2 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
失效
肖特基二极管，具有肖特基二极管的电阻式存储器件及其制造方法
- Patent Title: Schottky diode, resistive memory device having schottky diode and method of manufacturing the same
- Patent Title (中): 肖特基二极管，具有肖特基二极管的电阻式存储器件及其制造方法
-
Application No.: US13331698Application Date: 2011-12-20
-
Publication No.: US08541775B2Publication Date: 2013-09-24
- Inventor: Seung Beom Baek , Young Ho Lee , Jin Ku Lee , Mi Ri Lee
- Applicant: Seung Beom Baek , Young Ho Lee , Jin Ku Lee , Mi Ri Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0052435 20110531
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.
Public/Granted literature
- US20120305876A1 SCHOTTKY DIODE, RESISTIVE MEMORY DEVICE HAVING SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-12-06
Information query
IPC分类:
