Invention Grant
- Patent Title: Semiconductor devices and semiconductor device manufacturing methods
- Patent Title (中): 半导体器件和半导体器件制造方法
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Application No.: US13412248Application Date: 2012-03-05
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Publication No.: US08541841B2Publication Date: 2013-09-24
- Inventor: Won-joo Kim , Sang-moo Choi , Tae-hee Lee , Yoon-dong Park
- Applicant: Won-joo Kim , Sang-moo Choi , Tae-hee Lee , Yoon-dong Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0120682 20081201
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
Public/Granted literature
- US20120161277A1 SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE MANUFACTURING METHODS Public/Granted day:2012-06-28
Information query
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