Invention Grant
- Patent Title: Semiconductor device and driving method of the same
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US13683863Application Date: 2012-11-21
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Publication No.: US08542004B2Publication Date: 2013-09-24
- Inventor: Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
- Applicant: Semiconductor Energy Laboratory Co. Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-028820 20100212
- Main IPC: G01R19/00
- IPC: G01R19/00

Abstract:
An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.
Public/Granted literature
- US20130077386A1 Semiconductor Device And Driving Method Of The Same Public/Granted day:2013-03-28
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