Invention Grant
US08542037B2 Multi-level high voltage pulser integrated circuit using low voltage MOSFETs
有权
使用低压MOSFET的多级高压脉冲发生器集成电路
- Patent Title: Multi-level high voltage pulser integrated circuit using low voltage MOSFETs
- Patent Title (中): 使用低压MOSFET的多级高压脉冲发生器集成电路
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Application No.: US13355749Application Date: 2012-01-23
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Publication No.: US08542037B2Publication Date: 2013-09-24
- Inventor: Ben Choy , Ching Chu
- Applicant: Ben Choy , Ching Chu
- Applicant Address: US CA Sunnyvale
- Assignee: Supertex, Inc.
- Current Assignee: Supertex, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Weiss & Moy. P.C.
- Agent Jeffrey D. Moy
- Main IPC: H03K3/00
- IPC: H03K3/00
Abstract:
A multi-level high-voltage pulse generator integrated circuit has a digital logic-level control interface circuit. A pair of complementary MOSFETs is controlled by the digital control interface circuit. A pair of supply voltage rails is provided, wherein one of the pair of supply voltage rails is connected to each of the pair of complementary MOSFETs. A pair of Zener diodes is provided, wherein one of the pair of Zener diodes is connected to each of the pair of complementary MOSFETs. A pair of resistors is provided, wherein one of the pair of resistors is connected in parallel with each of the pair of Zener diodes. A pair of complementary voltage blocking-MOSFETs having predetermined gate bias voltages is provided, wherein each of the pair complementary voltage blocking-MOSFETs is attached to a corresponding one pair of complementary MOSFETs.
Public/Granted literature
- US20130187697A1 MULTI-LEVEL HIGH VOLTAGE PULSER INTEGRATED CIRCUIT USING LOW VOLTAGE MOSFETS Public/Granted day:2013-07-25
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