Invention Grant
- Patent Title: Method for electrochemically depositing carbon nitride films on a substrate
- Patent Title (中): 在基板上电化学沉积氮化碳膜的方法
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Application No.: US12789959Application Date: 2010-05-28
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Publication No.: US08545688B2Publication Date: 2013-10-01
- Inventor: Tokujiro Nishikiori , Hiroaki Amahashi , Kouji Kuroda , Yasuhiko Ito , Kazuhito Fukasawa , Naohiro Yasuda
- Applicant: Tokujiro Nishikiori , Hiroaki Amahashi , Kouji Kuroda , Yasuhiko Ito , Kazuhito Fukasawa , Naohiro Yasuda
- Applicant Address: JP Aichi JP Kyoto JP Hyogo JP Kyoto
- Assignee: Toyota Boshoku Kabushiki Kaisha,IMSEP Co., Ltd.,SEC Carbon Limited,The Doshisha
- Current Assignee: Toyota Boshoku Kabushiki Kaisha,IMSEP Co., Ltd.,SEC Carbon Limited,The Doshisha
- Current Assignee Address: JP Aichi JP Kyoto JP Hyogo JP Kyoto
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: C25D3/66
- IPC: C25D3/66
Abstract:
Dense carbon nitride films are electrochemically formed on a conductive substrate by placing the substrate acting as cathode in a molten salt electrolyte bath and applying DC current across the substrate and a counter electrode acting as anode also placed in the molten salt electrolyte bath. Carbonate ion and nitrate ion are concurrently reduced to deposit carbon nitride films on the substrate.
Public/Granted literature
- US20110290656A1 METHOD FOR ELECTROCHEMICALLY DEPOSITING CARBON NITRIDE FILMS ON A SUBSTRATE Public/Granted day:2011-12-01
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