Invention Grant
- Patent Title: Forming chalcogenide semiconductor absorbers
- Patent Title (中): 形成硫族化物半导体吸收剂
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Application No.: US12765407Application Date: 2010-04-22
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Publication No.: US08546176B2Publication Date: 2013-10-01
- Inventor: Wen-Chin Lee , Wen-Tsai Yen , Ding-Yuan Chen , Liang-Sheng Yu , Yu-Han Chang
- Applicant: Wen-Chin Lee , Wen-Tsai Yen , Ding-Yuan Chen , Liang-Sheng Yu , Yu-Han Chang
- Applicant Address: TW Hsinchu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
Public/Granted literature
- US20110263072A1 FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS Public/Granted day:2011-10-27
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