Methods for fabricating bipolar transistors with improved gain

Invention Grant

US08546229B2 Methods for fabricating bipolar transistors with improved gain 有权

Title translation: 制造改善增益的双极晶体管的方法

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Patent Title: Methods for fabricating bipolar transistors with improved gain
Patent Title (中): 制造改善增益的双极晶体管的方法
Application No.: US13760882

Application Date: 2013-02-06
Publication No.: US08546229B2

Publication Date: 2013-10-01
Inventor: Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
Applicant: Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/331
IPC: H01L21/331 ; H01L29/70

Methods for fabricating bipolar transistors with improved gain

Abstract:

Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has a first emitter (FE) portion (42-1) of a first dopant concentration CFE, and a second emitter (SE) portion (42-2) of a second dopant concentration CSE. Preferably CSE≧CFE. The SE portion (42-2) desirably comprises multiple sub-regions (45i, 45j, 45k) mixed with multiple sub-regions (47m, 47n, 47p) of the FE portion (42-1). A semiconductor-metal alloy or compound (e.g., a silicide) is desirably used for Ohmic contact (452) to the SE portion (42-2) but substantially not to the FE portion (42-1). Including the FE portion (42-1) electrically coupled to the SE portion (42-2) but not substantially contacting the emitter contact (452) on the SE portion (42-2) provides gain increases of as much as ˜278.

Abstract(Chinese):

通过提供小于总发射极（42）区域的合金化（例如硅化物）发射极接触（452），双极晶体管（20）的增益不足得到改善。改进的发射极（42）具有第一掺杂浓度CFE的第一发射极（FE）部分（42-1）和第二掺杂浓度CSE的第二发射极（SE）部分（42-2）。优选CSE> = CFE。 SE部分（42-2）理想地包括与FE部分（42-1）的多个子区域（47m，47n，47p）混合的多个子区域（45i，45j，45k）。理想地，将半导体 - 金属合金或化合物（例如，硅化物）用于与SE部分（42-2）的欧姆接触（452），但基本上不用于FE部分（42-1）。包括电耦合到SE部分（42-2）但基本上不接触SE部分（42-2）上的发射极触点（452）的FE部分（42-1）提供多达〜278的增益。

Public/Granted literature

US20130149831A1 METHODS FOR FABRICATING BIPOLAR TRANSISTORS WITH IMPROVED GAIN Public/Granted day:2013-06-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/328	....制造双极型器件，例如二极管、晶体管、晶闸管的台阶式工艺
H01L21/33	.....包括3个或更多电极的器件
H01L21/331	......晶体管