Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film
- Patent Title (中): 制造具有包含硼掺杂硅锗膜和金属膜的叠层结构的半导体器件的方法
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Application No.: US13533487Application Date: 2012-06-26
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Publication No.: US08546232B2Publication Date: 2013-10-01
- Inventor: Nobuyuki Sako
- Applicant: Nobuyuki Sako
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2011-148255 20110704
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/302 ; H01L21/461
Abstract:
A semiconductor device has memory cell portions and compensation capacitance portions on a single substrate. The memory cell portion and the compensation capacitance portion have mutually different planar surface areas. The memory cell portion and the compensation capacitance portion include capacitance plate electrodes of the same structure. The capacitance plate electrode has a laminated structure including a boron-doped silicon germanium film and a metal film.
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