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发明授权
US08546235B2 Integrated circuits including metal-insulator-metal capacitors and methods of forming the same 有权
包括金属 - 绝缘体 - 金属电容器的集成电路及其形成方法

Integrated circuits including metal-insulator-metal capacitors and methods of forming the same
摘要：
An integrated circuit includes a substrate and a first metal-insulator-metal (MIM) capacitor disposed over the substrate. The MIM capacitor includes a first metallic capacitor plate disposed over the substrate. At least one first insulator layer is disposed over the first metallic capacitor plate. A second metallic capacitor plate is disposed over the at least one first insulator layer. At least one first dielectric layer is disposed over the substrate. At least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer.
摘要（中）：

集成电路包括衬底和设置在衬底上的第一金属 - 绝缘体 - 金属（MIM）电容器。 MIM电容器包括设置在基板上的第一金属电容器板。 至少一个第一绝缘体层设置在第一金属电容器板上。 第二金属电容器板设置在至少一个第一绝缘体层上。 至少一个第一电介质层设置在衬底上。 所述至少一个第一介电层的至少一部分设置在所述第一金属电容器板和所述至少一个第一绝缘体层之间。

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