Invention Grant
- Patent Title: High performance dielectric stack for DRAM capacitor
- Patent Title (中): 用于DRAM电容器的高性能电介质堆叠
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Application No.: US13738866Application Date: 2013-01-10
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Publication No.: US08546236B2Publication Date: 2013-10-01
- Inventor: Sandra G. Malhotra , Hanhong Chen , Wim Deweerd , Mitsuhiro Horikawa , Kenichi Koyanagi , Hiroyuki Ode , Xiangxin Rui
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/31
Abstract:
A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.
Public/Granted literature
- US20130140619A1 High Performance Dielectric Stack for DRAM Capacitor Public/Granted day:2013-06-06
Information query
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