- 专利标题: Plasma processing method and plasma processing apparatus
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申请号: US13212909申请日: 2011-08-18
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公开(公告)号: US08546266B2公开(公告)日: 2013-10-01
- 发明人: Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
- 申请人: Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: TW096105248A 20070213; JP2008-002709 20080110
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
公开/授权文献
- US20110297533A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 公开/授权日:2011-12-08