Invention Grant
- Patent Title: Crystalline silicon based solar cell and method for manufacturing thereof
- Patent Title (中): 晶体硅太阳能电池及其制造方法
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Application No.: US13381610Application Date: 2010-07-02
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Publication No.: US08546685B2Publication Date: 2013-10-01
- Inventor: Daisuke Adachi , Kunta Yoshikawa , Kenji Yamamoto
- Applicant: Daisuke Adachi , Kunta Yoshikawa , Kenji Yamamoto
- Applicant Address: JP Osaka-shi
- Assignee: Kaneka Corporation
- Current Assignee: Kaneka Corporation
- Current Assignee Address: JP Osaka-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2009-159205 20090703; JP2009-240474 20091019
- International Application: PCT/JP2010/061343 WO 20100702
- International Announcement: WO2011/002086 WO 20110106
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00

Abstract:
Provided is a hetero-junction solar cell with a silicon crystalline substrate of small thickness but exhibiting less warpage, and having a high photoelectric conversion efficiency. The crystalline silicon substrate has a thickness of 50 μm to 200 μm, and has a rough structure on the light-incident-side surface thereof. The surface of the transparent conductive layer in the light incidence side has an irregular structure. The top-bottom distance in the irregular structure of the transparent conductive layer in the light-incidence-side is preferably smaller than the top-bottom distance in the rough structure of the crystalline silicon substrate in the-light-incidence side. The distance between tops of the projections in the irregular structure on the surface of the transparent conductive layer in the light incidence side is preferably smaller than the distance between tops of the projections in the rough structure on the surface of the crystalline silicon substrate in the light incidence side.
Public/Granted literature
- US20120097244A1 CRYSTALLINE SILICON BASED SOLAR CELL AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2012-04-26
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