发明授权
- 专利标题: Memristive device
- 专利标题(中): 忆阻器
-
申请号: US12751977申请日: 2010-03-31
-
公开(公告)号: US08546785B2公开(公告)日: 2013-10-01
- 发明人: Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
- 申请人: Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: H01L27/24
- IPC分类号: H01L27/24
摘要:
A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
公开/授权文献
- US20110240951A1 MEMRISTIVE DEVICE 公开/授权日:2011-10-06
信息查询
IPC分类: