发明授权
US08546830B2 Method of growing semiconductor heterostructures based on gallium nitride
有权
生长基于氮化镓的半导体异质结构的方法
- 专利标题： Method of growing semiconductor heterostructures based on gallium nitride
- 专利标题（中）： 生长基于氮化镓的半导体异质结构的方法
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申请号： US13444429申请日： 2012-04-11
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公开(公告)号： US08546830B2公开(公告)日： 2013-10-01
- 发明人: Vladimir Semenovich Abramov , Naum Petrovich Soshchin , Valeriy Petrovich Sushkov , Nikolay Valentinovich Shcherbakov , Vladimir Vladimirovich Alenkov , Sergei Aleksandrovich Sakharov , Vladimir Aleksandrovich Gorbylev
- 申请人： Vladimir Semenovich Abramov , Naum Petrovich Soshchin , Valeriy Petrovich Sushkov , Nikolay Valentinovich Shcherbakov , Vladimir Vladimirovich Alenkov , Sergei Aleksandrovich Sakharov , Vladimir Aleksandrovich Gorbylev
- 申请人地址： KR Seoul
- 专利权人： Seoul Semiconductor Co., Ltd.
- 当前专利权人： Seoul Semiconductor Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： H.C. Park & Associates, PLC
- 优先权： RU2006103270 20060206
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0