Invention Grant
- Patent Title: Non-volatile memory cell and fabricating method thereof
- Patent Title (中): 非易失性存储单元及其制造方法
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Application No.: US13177520Application Date: 2011-07-06
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Publication No.: US08546871B2Publication Date: 2013-10-01
- Inventor: Chi-Cheng Huang , Ping-Chia Shih , Chih-Ming Wang , Chun-Sung Huang , Hsiang-Chen Lee , Chih-Hung Lin , Yau-Kae Sheu
- Applicant: Chi-Cheng Huang , Ping-Chia Shih , Chih-Ming Wang , Chun-Sung Huang , Hsiang-Chen Lee , Chih-Hung Lin , Yau-Kae Sheu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate.
Public/Granted literature
- US20130009232A1 NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF Public/Granted day:2013-01-10
Information query
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