Invention Grant
- Patent Title: Semiconductor device
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Application No.: US12875021Application Date: 2010-09-02
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Publication No.: US08546881B2Publication Date: 2013-10-01
- Inventor: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- Applicant: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- Applicant Address: KR
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR
- Agency: Blakely Sokoloff Taylor & Zafman
- Priority: KR10-2009-0120116 20091204
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.
Public/Granted literature
- US20110133277A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-09
Information query
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