发明授权
US08547661B2 MAMR head with self-aligned write element and microwave field generator
有权
具有自对准写元件和微波场发生器的MAMR头
- 专利标题： MAMR head with self-aligned write element and microwave field generator
- 专利标题（中）： 具有自对准写元件和微波场发生器的MAMR头
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申请号： US12589274申请日： 2009-10-21
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公开(公告)号： US08547661B2公开(公告)日： 2013-10-01
- 发明人: Zhigang Bai
- 申请人： Zhigang Bai
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; G11B5/23 ; G11B5/187
摘要：
The invention discloses a MAMR head that has the STO stack placed at the trailing side of the write element, with both STO and write element completely self-aligned in the cross track direction. A method for defining both the MP and the STO stack geometries in a single step is also described.
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