Invention Grant
US08549659B2 Non-volatile memory for anti-cloning and authentication method for the same
有权
非易失性存储器用于抗克隆和认证方法相同
- Patent Title: Non-volatile memory for anti-cloning and authentication method for the same
- Patent Title (中): 非易失性存储器用于抗克隆和认证方法相同
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Application No.: US13230414Application Date: 2011-09-12
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Publication No.: US08549659B2Publication Date: 2013-10-01
- Inventor: Bo-Gyeong Kang , Jung-Wan Ko , Byung-Rae Lee
- Applicant: Bo-Gyeong Kang , Jung-Wan Ko , Byung-Rae Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: The Farrell Law Firm, P.C.
- Priority: KR10-2010-0088960 20100910; KR10-2010-0099010 20101011; KR10-2011-0089051 20110902
- Main IPC: G06F1/26
- IPC: G06F1/26 ; H04L9/32
Abstract:
A method and a non-volatile memory apparatus for cloning prevention is provided. The non-volatile memory apparatus includes an Enhanced Media Identification (EMID) area, which is located in a specific area of the non-volatile memory, and stores an EMID for identifying the non-volatile memory; and an EMID encoder for modifying the EMID by a preset operation in conjunction with an arbitrary value.
Public/Granted literature
- US20120066774A1 NON-VOLATILE MEMORY FOR ANTI-CLONING AND AUTHENTICATION METHOD FOR THE SAME Public/Granted day:2012-03-15
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