发明授权
- 专利标题: Method of fabricating semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US13240662申请日: 2011-09-22
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公开(公告)号: US08551871B2公开(公告)日: 2013-10-08
- 发明人: Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
- 申请人: Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2008-61064 20080311
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L21/36
摘要:
A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
公开/授权文献
- US20120090535A1 Method of Fabricating Semiconductor Device 公开/授权日:2012-04-19