Invention Grant
- Patent Title: Ammonia-based plasma treatment for metal fill in narrow features
- Patent Title (中): 氨基等离子体处理用于金属填充窄特征
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Application No.: US12262964Application Date: 2008-10-31
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Publication No.: US08551880B2Publication Date: 2013-10-08
- Inventor: Bencherki Mebarki , Amit Khandelwal , Linh H. Thanh
- Applicant: Bencherki Mebarki , Amit Khandelwal , Linh H. Thanh
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.
Public/Granted literature
- US20090117736A1 AMMONIA-BASED PLASMA TREATMENT FOR METAL FILL IN NARROW FEATURES Public/Granted day:2009-05-07
Information query
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