Invention Grant
US08552486B2 Forming metal-insulator-metal capacitors over a top metal layer
有权
在顶层金属层上形成金属 - 绝缘体 - 金属电容器
- Patent Title: Forming metal-insulator-metal capacitors over a top metal layer
- Patent Title (中): 在顶层金属层上形成金属 - 绝缘体 - 金属电容器
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Application No.: US13007777Application Date: 2011-01-17
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Publication No.: US08552486B2Publication Date: 2013-10-08
- Inventor: Kun-Mao Wu , Chih-Hsun Lin , Yu-Lung Yeh , Kuan-Chi Tsai
- Applicant: Kun-Mao Wu , Chih-Hsun Lin , Yu-Lung Yeh , Kuan-Chi Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
Public/Granted literature
- US20120181657A1 Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer Public/Granted day:2012-07-19
Information query
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