发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13290535申请日: 2011-11-07
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公开(公告)号: US08552497B2公开(公告)日: 2013-10-08
- 发明人: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- 申请人: Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
- 申请人地址: KR
- 专利权人: Magnachip Semiconductor, Ltd.
- 当前专利权人: Magnachip Semiconductor, Ltd.
- 当前专利权人地址: KR
- 代理机构: Blakely Sokoloff Taylor & Zafman
- 优先权: KR10-2009-0120005 20091204
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.
公开/授权文献
- US20120049278A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-03-01