Invention Grant
US08554529B2 Black box model for large signal transient integrated circuit simulation
有权
黑匣子模型用于大信号瞬态集成电路仿真
- Patent Title: Black box model for large signal transient integrated circuit simulation
- Patent Title (中): 黑匣子模型用于大信号瞬态集成电路仿真
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Application No.: US11998478Application Date: 2007-11-30
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Publication No.: US08554529B2Publication Date: 2013-10-08
- Inventor: Yuri Mirgorodski , Peter J. Hopper , William French , Philipp Lindorfer
- Applicant: Yuri Mirgorodski , Peter J. Hopper , William French , Philipp Lindorfer
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of simulating an integrated circuit device under test (DUT) is provided, wherein the DUT includes a plurality of terminals. For each terminal of the DUT, a probe pulse is applied to the terminal and a reaction is recorded at the terminal and each of the other terminals to obtain values representative of reactive tails for the terminal. For each terminal, the values representative of the reactive tails obtained for the terminal are stored as an entry of a look-up table. Each entry includes n+x fields, wherein n represents a number of arguments in the entry and x represents a number of functions in the entry. For each terminal, a signal value at a selected time step is calculated.
Public/Granted literature
- US20090144035A1 Black box model for large signal transient integrated circuit simulation Public/Granted day:2009-06-04
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