Invention Grant
- Patent Title: Transistor device with reduced gate resistance
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Application No.: US13251637Application Date: 2011-10-03
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Publication No.: US08557643B2Publication Date: 2013-10-15
- Inventor: Shu-Jen Han , Alberto Valdes Garcia
- Applicant: Shu-Jen Han , Alberto Valdes Garcia
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/44 ; H01L21/336 ; H01L29/786
Abstract:
A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided.
Public/Granted literature
- US20130082242A1 TRANSISTOR DEVICE WITH REDUCED GATE RESISTANCE Public/Granted day:2013-04-04
Information query
IPC分类:
