Invention Grant
- Patent Title: Semiconductor devices and method of forming the same
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Application No.: US12385287Application Date: 2009-04-03
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Publication No.: US08557713B2Publication Date: 2013-10-15
- Inventor: Ha-Jin Lim , Hyung-Suk Jung , Yun-Ki Choi
- Applicant: Ha-Jin Lim , Hyung-Suk Jung , Yun-Ki Choi
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce P.L.C.
- Priority: KR10-2008-0048138 20080523
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.
Public/Granted literature
- US20090291568A1 Semiconductor devices and method of forming the same Public/Granted day:2009-11-26
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