发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12801912申请日： 2010-07-01
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公开(公告)号： US08557717B2公开(公告)日： 2013-10-15
- 发明人: Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
- 申请人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-284057 20050929; JP2006-176863 20060627
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
公开/授权文献
- US20110003481A1 Method for manufacturing a semiconductor device 公开/授权日：2011-01-06