发明授权
- 专利标题: Oxide thin film transistor having source and drain electrodes being formed between a primary and a secondary active layers
- 专利标题(中): 具有源极和漏极的氧化物薄膜晶体管形成在初级和次级有源层之间
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申请号: US13243584申请日: 2011-09-23
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公开(公告)号: US08558225B2公开(公告)日: 2013-10-15
- 发明人: Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
- 申请人: Jong-Uk Bae , Hyun-Sik Seo , Yong-Yub Kim
- 申请人地址: KR Seoul
- 专利权人: LG Display Co., Ltd.
- 当前专利权人: LG Display Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: KR10-2009-0046619 20090527
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
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