发明授权
- 专利标题： Four-terminal metal-over-metal capacitor design kit
- 专利标题（中）： 四端子金属金属电容器设计套件
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申请号： US12915757申请日： 2010-10-29
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公开(公告)号： US08558228B2公开(公告)日： 2013-10-15
- 发明人: Chia-Chung Chen , Chi-Feng Huang , Tse-Hua Lu , Sally Liu
- 申请人： Chia-Chung Chen , Chi-Feng Huang , Tse-Hua Lu , Sally Liu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A device includes a first MOM capacitor; a second MOM capacitor directly over and vertically overlapping the first MOM capacitor, wherein each of the first and the second MOM capacitors includes a plurality of parallel capacitor fingers; a first and a second port electrically coupled to the first MOM capacitor; and a third and a fourth port electrically coupled to the second MOM capacitor. The first, the second, the third, and the fourth ports are disposed at a surface of a respective wafer.
公开/授权文献
- US20120104387A1 Four-Terminal Metal-Over-Metal Capacitor Design Kit 公开/授权日：2012-05-03
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