发明授权
- 专利标题： Semiconductor device and fabrication process thereof
- 专利标题（中）： 半导体器件及其制造工艺
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申请号： US12126357申请日： 2008-05-23
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公开(公告)号： US08558294B2公开(公告)日： 2013-10-15
- 发明人: Naoya Sashida
- 申请人： Naoya Sashida
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L27/105
- IPC分类号： H01L27/105
摘要：
A semiconductor device includes a semiconductor substrate formed with an active element, an oxidation resistant film formed over the semiconductor substrate so as to cover the active element, a ferroelectric capacitor formed over the oxidation resistance film, the ferroelectric capacitor having a construction of consecutively stacking a lower electrode, a ferroelectric film and an upper electrode, and an interlayer insulation film formed over the oxidation resistance film so as to cover the ferroelectric capacitor, wherein there are formed, in the interlayer insulation film, a first via-plug in a first contact hole exposing the first electrode and a second via-plug in a second contact hole exposing the lower electrode, and wherein there is formed another conductive plug in the interlayer insulation film in an opening exposing the oxidation resistant film.
公开/授权文献
- US20080224194A1 SEMICONDUCTOR DEVICE AND FABRICATION PROCESS THEREOF 公开/授权日：2008-09-18
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