发明授权
- 专利标题: Bulk substrate FET integrated on CMOS SOI
- 专利标题(中): 集成在CMOS SOI上的散装衬底FET
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申请号: US13425681申请日: 2012-03-21
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公开(公告)号: US08558313B2公开(公告)日: 2013-10-15
- 发明人: Anthony I. Chou , Arvind Kumar , Shreesh Narasimha , Ning Su , Huiling Shang
- 申请人: Anthony I. Chou , Arvind Kumar , Shreesh Narasimha , Ning Su , Huiling Shang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Joseph Petrokaitis; Matthew C. Zehrer
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.
公开/授权文献
- US20120187492A1 BULK SUBSTRATE FET INTEGRATED ON CMOS SOI 公开/授权日:2012-07-26