发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US12884533申请日: 2010-09-17
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公开(公告)号: US08558602B2公开(公告)日: 2013-10-15
- 发明人: Ryo Fukuda , Masaru Koyanagi
- 申请人: Ryo Fukuda , Masaru Koyanagi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-273787 20091201
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
According to one embodiment, a semiconductor integrated circuit includes first and second level shift circuits. The first level shifter includes a plurality of transistors and is connected to a power source voltage supply node of a first power source system and to which a first signal of a second power source system and a level inversion signal of the first signal are input. The second level shifter includes a plurality of transistors and is connected to the power source voltage supply node of the first power source system and to which the level inversion signal of the first signal of the second power source system and an output signal of the first level shifter are input. The first and second level shifters have substantially the same circuit configuration and driving abilities of corresponding ones of the transistors in the first and second level shifters are substantially set equal.
公开/授权文献
- US20110128063A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日:2011-06-02
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