Invention Grant
US08559241B2 Data receiver, semiconductor device and memory device including the same
有权
数据接收器,半导体器件和包括其的存储器件
- Patent Title: Data receiver, semiconductor device and memory device including the same
- Patent Title (中): 数据接收器,半导体器件和包括其的存储器件
-
Application No.: US13110161Application Date: 2011-05-18
-
Publication No.: US08559241B2Publication Date: 2013-10-15
- Inventor: Sung-Joo Park , Jea-Eun Lee , Jung-Joon Lee , Yang-Ki Kim , Kyoung-Sun Kim
- Applicant: Sung-Joo Park , Jea-Eun Lee , Jung-Joon Lee , Yang-Ki Kim , Kyoung-Sun Kim
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0069409 20100719
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A data receiver includes a first buffer circuit and a second buffer circuit. The first buffer circuit varies a resistance of a data path and a resistance of a reference voltage path based on a plurality of control signals, and adjusts a voltage level of an input data signal and a level of a reference voltage to generate an internal data signal and an internal reference voltage based on the varied resistance of the data path and the varied resistance of the reference voltage path. The second buffer circuit compares the internal data signal with the internal reference voltage to generate a data signal.
Public/Granted literature
- US20120014156A1 DATA RECEIVER, SEMICONDUCTOR DEVICE AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2012-01-19
Information query