发明授权
- 专利标题: Heat treatment apparatus and method for heating substrate by photo-irradiation
- 专利标题(中): 热处理装置及通过光照射加热基板的方法
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申请号: US12563409申请日: 2009-09-21
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公开(公告)号: US08559799B2公开(公告)日: 2013-10-15
- 发明人: Hideo Nishihara , Shinichi Kato
- 申请人: Hideo Nishihara , Shinichi Kato
- 申请人地址: JP
- 专利权人: Dainippon Screen Mfg. Co., Ltd.
- 当前专利权人: Dainippon Screen Mfg. Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Ostrolenk Faber LLP
- 优先权: JP2008-283294 20081104; JP2009-135398 20090604
- 主分类号: F26B19/00
- IPC分类号: F26B19/00
摘要:
Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
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