发明授权
US08561004B2 Ring power gating with distributed currents using non-linear contact placements 有权
使用非线性触点放置的分布电流的环形电源门控

Ring power gating with distributed currents using non-linear contact placements
摘要:
A power gate includes a series of electrical contacts along at least a portion of an integrated circuit and a series of power gate transistors electrically coupled to the electrical contacts on the integrated circuit to form a power gate boundary, e.g., at the integrated circuit periphery. The electrical contacts along at least a portion of a running length of the power gate boundary define a substantially non-linear profile. The non-linear profile provides increased contact density which improves current balancing across the electrical contacts and current throughput through the power gate. The non-linear profile is a sinusoidal or zigzag pattern with intermediate offset bump contacts. The contact profiles along the power gate boundary can include both linear and non-linear profiles.
信息查询
0/0