发明授权
US08561004B2 Ring power gating with distributed currents using non-linear contact placements
有权
使用非线性触点放置的分布电流的环形电源门控
- 专利标题: Ring power gating with distributed currents using non-linear contact placements
- 专利标题(中): 使用非线性触点放置的分布电流的环形电源门控
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申请号: US12758525申请日: 2010-04-12
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公开(公告)号: US08561004B2公开(公告)日: 2013-10-15
- 发明人: Stephen V. Kosonocky
- 申请人: Stephen V. Kosonocky
- 申请人地址: US CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Abel Law Group, LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06F9/455
摘要:
A power gate includes a series of electrical contacts along at least a portion of an integrated circuit and a series of power gate transistors electrically coupled to the electrical contacts on the integrated circuit to form a power gate boundary, e.g., at the integrated circuit periphery. The electrical contacts along at least a portion of a running length of the power gate boundary define a substantially non-linear profile. The non-linear profile provides increased contact density which improves current balancing across the electrical contacts and current throughput through the power gate. The non-linear profile is a sinusoidal or zigzag pattern with intermediate offset bump contacts. The contact profiles along the power gate boundary can include both linear and non-linear profiles.
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