发明授权
US08563216B2 Substrate to be processed having laminated thereon resist film for electron beam and organic conductive film, method for manufacturing the same, and resist patterning process 有权
在其上层压有用于电子束和有机导电膜的抗蚀剂膜的基板,其制造方法和抗蚀剂图案化工艺

  • 专利标题: Substrate to be processed having laminated thereon resist film for electron beam and organic conductive film, method for manufacturing the same, and resist patterning process
  • 专利标题(中): 在其上层压有用于电子束和有机导电膜的抗蚀剂膜的基板,其制造方法和抗蚀剂图案化工艺
  • 申请号: US13168446
    申请日: 2011-06-24
  • 公开(公告)号: US08563216B2
    公开(公告)日: 2013-10-22
  • 发明人: Satoshi WatanabeHiroki Yoshikawa
  • 申请人: Satoshi WatanabeHiroki Yoshikawa
  • 申请人地址: JP Tokyo
  • 专利权人: Shin-Etsu Chemical Co., Ltd.
  • 当前专利权人: Shin-Etsu Chemical Co., Ltd.
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Oliff & Berridge, PLC
  • 优先权: JP2010-165767 20100723
  • 主分类号: G03C5/00
  • IPC分类号: G03C5/00
Substrate to be processed having laminated thereon resist film for electron beam and organic conductive film, method for manufacturing the same, and resist patterning process
摘要:
There is disclosed a substrate to be processed having laminated thereon a resist film for electron beam and an organic conductive film, in which at least a resist film for electron beam and an organic conductive film are laminated in order on a substrate to be processed having a conductive inorganic thin film as its surface layer, wherein a surface to be processed of the substrate to be processed has an area of direct contact between the organic conductive film and the conductive inorganic thin film in part thereof. There can be a substrate to be processed capable of forming a resist pattern stably and accurately with efficient removal of electricity even when an electron beam with high current density is irradiated.
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