发明授权
- 专利标题： Semiconductor devices including gate structures comprising colossal magnetocapacitive materials
- 专利标题（中）： 包括包含巨磁电容材料的栅极结构的半导体器件
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申请号： US12755940申请日： 2010-04-07
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公开(公告)号： US08564039B2公开(公告)日： 2013-10-22
- 发明人: Gurtej S. Sandhu
- 申请人： Gurtej S. Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/82
摘要：
Semiconductor devices include a transistor having a gate structure located close to a channel region that comprises a colossal magnetocapacitive material. The gate structure is configured to affect electrical current flow through the channel region between a source and a drain. The colossal magnetocapacitive material optionally may be disposed between two structures, one or both of which may be electrically conductive, magnetic, or both electrically conductive and magnetic. Methods of fabricating semiconductor devices include forming a colossal magnetocapacitive material close to a channel region between a source and a drain of a transistor, and configuring the colossal magnetocapacitive material to exhibit colossal magnetocapacitance for generating an electrical field in the channel region. Methods of affecting current flow through a transistor include causing a colossal magnetocapacitive material to exhibit colossal magnetocapacitance and generate an electrical field in a channel region of a transistor.
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