发明授权
- 专利标题: Shielded gate trench MOSFET device and fabrication
- 专利标题(中): 屏蔽栅沟槽MOSFET器件和制造
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申请号: US13456406申请日: 2012-04-26
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公开(公告)号: US08564055B2公开(公告)日: 2013-10-22
- 发明人: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人地址: US CA Sunnyvale
- 专利权人: Alpha and Omega Semiconductor Incorporated
- 当前专利权人: Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Van Pelt, Yi & James LLP
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
公开/授权文献
- US20120205737A1 SHIELDED GATE TRENCH MOSFET DEVICE AND FABRICATION 公开/授权日:2012-08-16